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We then add the metallization layers as usual. These layers may have different thicknesses, depending on what we want them to do (signal or power, for example). Between each pair of adjacent metal layers, we will need an isolation layer (silicon dioxide or a low-k dielectric layer). We end with a final layer of silicon dioxide, and we polish the surface of the wafer to be as flat as possible. In fact, the wafer is polished multiple times as the metal/dielectric layer combos are added.

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