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Regardless of the DP method used, the fundamental question remains—how to accommodate the parasitic variation incurred by the mask shift. In short, the answer is to use corner methodologies that were previously used for interlayer shifting, and apply them to intralayer shifting. For 20nm, new interconnect corners will be introduced to accommodate mask shifts. The good news is that the nanometer shifts in masks will be captured in parasitic extraction tools to accurately characterize how the circuit will perform across the entire process window. The downside is that new corners mean more extraction runs, more netlists, and more simulation.

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